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SF5G49

Toshiba Semiconductor

(SF5x49) THYRISTOR SILICON PLANAR TYPE

www.DataSheet4U.com SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 ...


Toshiba Semiconductor

SF5G49

File Download Download SF5G49 Datasheet


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www.DataSheet4U.com SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 Medium Power Control Applications · · · Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: VRRM = 400, 600 V Average on-state current: IT (AV) = 5 A Gate trigger current: IGT = 70 µA max Unit: mm Maximum Ratings Characteristics Repetitive peak off-state voltage and Repetitive peak reverse voltage (RGK = 330 W) Non-repetitive peak reverse voltage (non-repetitive < 5 ms, Tj = 0~125°C, RGK = 330 W) Average on-state current R.M.S on-state current Peak one cycle surge on-state current (non-repetitive) I2t limit value Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range SF5G49 USF5G49 SF5J49 USF5J49 SF5G49 USF5G49 SF5J49 USF5J49 Symbol Rating 400 V 600 500 VRSM 720 IT (AV) IT (RMS) ITSM I2t PGM PG (AV) VFGM VRGM IGM Tj Tstg 5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125 A A A A2s W W V V mA °C °C V Unit VDRM VRRM JEDEC JEITA TOSHIBA ― ― 13-7F1A Weight: 0.36 g (typ.) Note: Should be used with gate resistance as follows: Anode Gate RGK < = 330 W Cathode JEDEC JEITA TOSHIBA ― ― 13-F2A Weight: 0.28 g (typ.) 1 2002-02-05 www.DataSheet4U.com SF5G49,SF5J49,USF5G49,USF5J49 Electrical Characteristics (Ta = 25°C) Characteristics Repetitive peak off-state current and Repetitive peak rever...




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