J598

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-251) –60 m20 m12 m30 23 1.0 150 –55 to +150 –12 14.4 V V A A W W °C °C A mJ (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14656EJ4V0DS00 (4th edition) Date Published August 2004 NS CP(K) P...