DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2...
DATA SHEET
www.DataSheet4U.com
MOS FIELD EFFECT
TRANSISTOR
2SJ598
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect
Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ598 2SJ598-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
(TO-251) –60 m20 m12 m30 23 1.0 150 –55 to +150 –12 14.4 V V A A W W °C °C A mJ (TO-252)
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy
Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
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Document No. D14656EJ4V0DS00 (4th edition) Date Published August 2004 NS CP(K) P...