Surface Mount P-Channel Enhancement Mode MOSFET
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WT4433AM
Surface Mount P-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT -6 AMPERES...
Description
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WT4433AM
Surface Mount P-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT -6 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE
D
1 3
S S G
8 7
D
2
D
6
S
D
4
5
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <35 mΩ @VGS = -10V R DS(ON) <55 m Ω@VGS = -4.5V *Rugged and Reliable *SO-8 Package
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C
±20
-6 -30 -1.7 2.5 50 -55 to 150
Device Marking
WT4433AM=STM4433A
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29-Jun-05
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WT4433AM
Electrical Characteristics Static (2)
Characteristic (TA =25 C Unless otherwise noted) Symbol
V(BR)DSS VGS (th) IGSS IDSS
Min
Typ
-1.9 -
Max
-3.0 +100 -1
35 55
Unit
V V nA uA
Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-5.8A VGS=-4.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-10V Forward Transconductance VDS=-15V, ID=-5.8A
-30 -1 -
-20
RDS (on)
ID(on) gfs
21 40
mΩ
8.5
-
A S
-
Dynamic (3)
Input Cap...
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