Reverse Conducting IGBT
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Soft Switching Series
IHW15N120R q
C
Reverse Conducting IGBT with monolithic body diode
Features:...
Description
www.DataSheet4U.com
Soft Switching Series
IHW15N120R q
C
Reverse Conducting IGBT with monolithic body diode
Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: Inductive Cooking Soft Switching Applications Type IHW20N120R VCE 1200V IC 20A VCE(sat),Tj=25°C 1.65V Tj,max 175°C Marking H20R120 Package PG-TO-247-3-21
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E
PG-TO-247-3-21
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms) Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from ca...
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