NT332

www.DataSheet4U.com Semiconductor NT332 PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.15V(Max.) Extremely small size package: 0.8x0.6x0.4 ㎜ Typ. Complementary pair with NT331 Ordering Information Type NO. NT332 Marking P□ □:hFE rank Package Code SOT-923 Outline Dimensions unit : mm 0.27 Max. 0.90~1.10 0.05 Max. 0.75~0.85 0.35 Typ. 0.55~0.65 0.36~0.42 0.22 Max. Equivalent Circuit 0.36~0.43 0.15 Max. PIN Connections 1. Base 2. Emitter 3. Collector KSD-T5G002-000 1 www.DataSheet4U.com NT332 Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range (Ta=25°C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -20 -20 -5 -50 50 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO hFE* VCE(sat) VBE fT Cob Test Condition IC=-1mA, IB=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-50mA, IB=-5mA VCE=-6V, IC=-2mA VCE=-10V, IC=-10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -20 120 -0.7 200 4 -0.1 -0.1 400 -0.15 -0.9 - Unit V µA µA V V MHz pF *: hFE rank / Y : 120~240, G : 200~4...