2N2270

www.DataSheet4U.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2270 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Junction to Case SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 45 60 60 7.0 1.0 1.0 5.71 5.0 28.6 - 65 to +200 UNIT V V V V A W mW/ ºC W mW/ ºC ºC Rth (j-a) Rth (j-c) 175 35 ºC/W ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCER IC=1mA, RBE=10Ω Collector Emitter Voltage VCBO Collector Base Voltage IC=100µA, IE=0 V IE=100µA, IC=0 Emitter Base Voltage EBO ICBO VCB=60V, IE=0 Collector Cut Off Current VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain IEBO *VCE (sat) *VBE (sat) *hFE VEB=5V, IC=0 IC=150mA, IB=15mA IC=150mA, IB=15mA IC=1mA, VCE=10V IC=150mA, VCE=10V *Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2% MIN 45 60 60 7 TYP MAX 50 100 100 0.9 1.2 30 50 200 UNIT V V V V nA µA nA V V 2N2270Rev_1 040904E Continental Device In...