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TSM1N60L

Taiwan Semiconductor

600V N-Channel Power MOSFET


Description
TSM1N60L 600V N-Channel Power MOSFET TO-252 TO-251 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 12 @ VGS =10V ID (A) 1 General Description The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET...



Taiwan Semiconductor

TSM1N60L

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