SSM3K16FV

SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications Analog Switch Applications Suitable for high-density mounting due to compact package Low on-resistance : Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage Drain current DC Pulse VGSS ID IDP ±10 V 100 mA 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C 0.22±0.05 1.2±0.05 0.8±0.05 nit: mm 0.32±0.05 1 3 2 1.2±0.05 0.8±0.05 0.4 0.4 0.13±0.05 0.5±0.05 VESM 1.Gate 2.Source 3.Drain Note: Using continuously under heavy loads (e.g. the application of JEDEC - high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA - reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the TOSHIBA 2-1L1B absolute maximum ratings. Weight: 0.0015 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board (25...