BSC042N03LSG

www.DataSheet4U.com BSC042N03LS G OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Type BSC042N03LS G Package PG-TDSON-8 Marking 042N03LS 1) Product Summary V DS R DS(on),max ID 30 4.2 93 V mΩ A PG-TDSON-8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 93 59 75 48 Unit A 21 372 50 50 6 ±20 mJ kV/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=40 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 0.99 - target datasheet page 1 2007-03-02 www.DataSheet4U.com BSC042N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 57 2.8 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Va...