UTC9014

www.DataSheet4U.com UTC 9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Pc Tj TSTG RATING 50 45 5 100 450 150 -55 ~ +150 UNIT V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain-Bandwidth Porduct Noise Figure SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob fT NF TEST CONDITIONS Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V,Ic=1mA Ic=100mA, IB=5mA Ic=100mA, IB=5mA VCE=5V, Ic=2mA VCB=10V, IE=0, f=1MHz VCE=5V, Ic=10mA VCE=5V, Ic=0.2mA f=1KHz, Rs=2KΩ MIN 50 45 5 TYP MAX UNIT V V V nA nA V V V pF MHz dB 60 0.58 150 280 0.14 0.84 0.63 2.2 270 0.9 50 100 1000 0.3 1.0 0.7 3.5 10 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-031,A www.DataSheet4U.com UTC 9014 CLASSIFICATI...