www.DataSheet4U.com
UTC 9014
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High tot...
www.DataSheet4U.com
UTC 9014
NPN EPITAXIAL SILICON
TRANSISTOR
PRE-AMPLIFIER, LOW LEVEL & LOW NOISE
FEATURES
*High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015
1
TO-92
1: EMITTER
2: BASE
3: COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Ic Pc Tj TSTG
RATING
50 45 5 100 450 150 -55 ~ +150
UNIT
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Output Capacitance Current gain-Bandwidth Porduct Noise Figure
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Cob fT NF
TEST CONDITIONS
Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V,Ic=1mA Ic=100mA, IB=5mA Ic=100mA, IB=5mA VCE=5V, Ic=2mA VCB=10V, IE=0, f=1MHz VCE=5V, Ic=10mA VCE=5V, Ic=0.2mA f=1KHz, Rs=2KΩ
MIN
50 45 5
TYP
MAX
UNIT
V V V nA nA V V V pF MHz dB
60
0.58 150
280 0.14 0.84 0.63 2.2 270 0.9
50 100 1000 0.3 1.0 0.7 3.5 10
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-031,A
www.DataSheet4U.com
UTC 9014
CLASSIFICATI...