www.DataSheet4U.com
FDS8958
October 2004
FDS8958
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dua...
www.DataSheet4U.com
FDS8958
October 2004
FDS8958
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
Q1: N-Channel RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V Q2: P-Channel RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package 7.0A, 30V
-5A, -30V
D1 D
D1 D
DD2 D2 D
5 6
Q2
4 3
Q1
SO-8
Pin 1 SO-8
G1 S1 S
G2 S2 G
7 8
2 1
S
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25°C unless otherwise noted
Parameter
Q1
30
(Note 1a)
Q2
30 ±20 -5 -20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
±20 7 20
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C °C/W °C/W
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
Package Marking and Ordering Infor...