Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification Comp...
Power
Transistors
2SC1568
Silicon
NPN epitaxial planar type
For low-voltage type medium output power amplification Complementary to 2SA0900
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances and high efficiency with a lowvoltage power supply
TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
18
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
18
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
1
A
n u duct typed Peak collector current
ICP
2
A
te tin Pro ed Collector power dissipation
PC
1.2
W
ur tinu Junction temperature
Tj
150
°C
ing fo iscon Storage temperature
Tstg −55 to +150 °C
0.75±0.1
0.5±0.1
4.6±0.2 2.3±0.2
0.5±0.1
1.76±0.1
123
1: Emitter 2: Collector 3: Base TO-126B-A1 Package
in n es follopwlaned d ■ Electrical Characteristics Ta = 25°C ± 3°C
a o includ type, Parameter
Symbol
Conditions
Min Typ Max Unit
c ued nce Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
18
V
M is ntin tena Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
18
V
isco ain Emitter-base voltage (Collector open) VEBO IE = 10 µA...
