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K9F1208D0A

Samsung semiconductor

(K9F1208x0A / K9F1216x0A) 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory

www.DataSheet4U.com K9F1208D0A K9F1216D0A K9F1208U0A K9F1216U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bi...


Samsung semiconductor

K9F1208D0A

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www.DataSheet4U.com K9F1208D0A K9F1216D0A K9F1208U0A K9F1216U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed. (before) 9 x 11 /0.8mm pitch , Width 1.0 mm (after ) To Be Decided. TBGA(K9F12XXX0A-DCB0/DIB0) size information is changed. (before) 9 x 11 /0.8mm pitch , Width 1.0 mm, to (after) 8.5 x 15 /0.8mm pitch, Width 1.0mm Draft Date Apr. 25th 2002 May. 9th 2002 Remark Preliminary 0.2 July, 10th 2002 0.3 0.4 Pin numbering includes TBGA Dummy ball . (Page5) Pin numbering excludes TBGA Dummy ball . (Page5) Pin assignment of TBGA dummy ball is changed. (before) DNU --> (after) N.C 1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 43) 2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 44) The min. Vcc value 1.8V devices is changed. K9F1208Q0A : Vcc 1.65V~1.95V --> 1.70V~1.95V Pb-free Package is added. K9F1208U0A-FCB0,FIB0 K9F1208Q0A-HCB0,HIB0 K9F1216U0A-HCB0,HIB0 K9F1216U0A-PCB0,PIB0 K9F1216Q0A-HCB0,HIB0 K9F1208U0A-HCB0,HIB0 K9F1208U0A-PCB0,PIB0 Errata is added.(Front Page)-K9F1208Q0A tWC tWH tWP tRC tREH tRP tREA tCEA Specification 45 15 25 50 15 25 30 45 Relaxed value 60 20 40 60 20 40 40 55 New definition of the number of invalid blocks is added. (Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.) 1. 2.65V device is added. 2. Note is added. (VIL can...




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