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H327

Shantou Huashan Electronic

PNP Silicon Transistor

www.DataSheet4U.com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327 ¨€ ¨€ T s...


Shantou Huashan Electronic

H327

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www.DataSheet4U.com P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H327 ¨€ ¨€ T stg ¡ ª Tj¡ª PC¡ª VCBO¡ª VCEO¡ª SWITCHING AND AMPLFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ - ¡ - ¡ - ¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡-¡ -¡ -¡ Collector-Base Voltage¡-¡ -¡ -¡ -¡ Collector-Emitter Voltage¡-¡ -¡ -¡ -¡ Emitter-Base Voltage¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ - ¡ Collector Current¡ - ¡ - ¡ -¡ - ¡ -¡ - ¡ - ¡ Suitable for AF-Driver stages and low power output stages Ta=25¡æ£© -55~150¡æ 150¡æ 625mW -50V -45V -5V -500mA TO-92 1¨D Collector£¬ C 2¨D Base£¬ B 3¨D Emitter£¬ E V EBO ¡ ª ¡ ª IC¡ª ¨€ ELECTRICAL CHARACTERISTICS£¨ Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Ta=25¡æ£© Typ Max Unit Test Conditions Symbol Min BVCBO BVCEO BVEBO ICBO IEBO HFE£¨ HFE£¨ 1£© 2£© -50 -45 -5 -100 -10 100 40 600 -0.7 -1.2 100 8 ¦Ì V V V nA A IC=-100¦Ì IE=-100¦Ì A, IE=0 A£¬ IC=0 IC=-10mA, IB=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage Current Gain-Bandwidth Product Collector-Base Capacitance VCE(sat) VBE(ON) fT Ccbo V V MHz pF IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA VCB=-10V, IE=0 F=1MHz ¨€ hFE Classification 16 100¡ª 250 160¡ª 25 40...




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