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M58WR064HT M58WR064HB
64 Mbit (4 Mb x16, multiple bank, burst) 1.8 V supply Flash memories
Features
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Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2.24 V for I/O buffers – VPP = 12 V for fast program (optional) Synchronous/asynchronous read – Synchronous burst read mode: 66 MHz – Asynchronous/synchro...
