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2SK3757
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757
Switching Regulator Applications
• • • • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 ±30 2 5 30 103 2 3 150 −55~150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: Gate 2: Drain 3: Source
JEDEC JEITA TOSHIBA
− SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.17 62.5 Unit °C/W °C/W 1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with caution.
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2SK3757
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Gate -source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr 10 V VGS 0V 50 Ω ID = 1 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min ⎯ ±30 ⎯ 450 2.0 ⎯ 0.28 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.9 1.0 330 4 45 15 Max ±10 ⎯ 100 ⎯ 4.0 2.45 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S
⎯ ⎯
VOUT
⎯ ⎯ ⎯
ns
Turn-on time Switching time Fall time
ton
⎯
RL = 200 Ω
25
tf Duty < = 1%, tw = 10 μs VDD ∼ − 200 V
⎯
⎯ ⎯ VDD ∼ − 360 V, VGS = 10 V, ID = 2 A ⎯ ⎯
20
⎯ ⎯
⎯ ⎯ ⎯ nC
Turn-off time Total gate charge Gate-source charge Gate-drain charge
toff Qg Qgs Qgd
80 9 5 4
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1000 5.0 Max 2 5 −1.5 ⎯ ⎯ Unit A A V ns μC
Marking
K3757
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3757
ID – VDS
2
COMMON SOURCE TC = 25℃ PULSE TEST
ID – VDS
5
6.0
10 8.0 7.25 7.0 6.75
COMMON SOURCE TC = 25℃ PULSE TEST
8.0
DRAIN CURRENT ID (A)
5.75 10
DRAIN CURRENT ID (A)
1.6
4
1.2
5.5
3
6.5
0.8
5.25 5.0
2
6.0
5.5
0.4
VGS = 4.5V
1
VGS = 5.0V
0 0 2 4 6 8 DRAIN−SOURCE VOLTAGE VDS (V) 10
0 0 10 20 30 40 DRAIN−SOURCE VOLTAGE VDS (V) 50
ID – VGS
5
DRAIN−SOURCE VOLTAGE VDS (V)
COMMON SOURCE VDS = 20V PULSE TEST
VDS – VGS
10
COMMON SOURCE TC = 25℃ PULSE TEST
DRAIN CURRENT ID (A)
4
8
3
6
ID = 2.0A
2
100 25
4
1.0
1
TC = -55℃
2
0.5
0 0 2 4 6 8 GATE−SOURCE VOLTAGE VGS (V) 10
0 0 4 8 12 16 GATE−SOURCE VOLTAGE VGS (V) 20
⎪Yfs⎪ – ID
FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
RDS (ON) – ID
30
10.0
DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω)
COMMON SOURCE VDS = 20V PULSE TEST
COMMON SOURCE Tc = 25°C PULSE TEST 10
TC = -55℃ 25 100
5 3
1.0
VGS = 10, 15 V
1
0.1 0.1 1 DRAIN CURRENT ID (A) 10
0.5 0.1
0.3
0.5
1
3
5
10
DRAIN CURRENT ID (A)
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2SK3757
RDS (ON) – Tc
10
IDR – VDS
10
DRAIN REVERSE CURRENT IDR (A)
DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω)
COMMON SOURCE VGS = 10 V PULSE TEST
8
3
COMMON SOURCE Tc = 25°C PULSE TEST
1
6 ID = 2 A 4
1.0
0.3 10 3 0.03 1 0.01 VGS = 0, −1 V
0.5
0.1
2
0 −80
−40
0
40
80
120
160
0
−0.2
−0.4
.