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2SK3757 Dataheets PDF



Part Number 2SK3757
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description N-Channel MOSFET
Datasheet 2SK3757 Datasheet2SK3757 Datasheet (PDF)

www.DataSheet4U.com 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source.

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www.DataSheet4U.com 2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3757 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAR IAR EAR Tch Tstg Rating 450 450 ±30 2 5 30 103 2 3 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA − SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 4.17 62.5 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with caution. 3 1 2006-11-06 www.DataSheet4U.com 2SK3757 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate -source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr 10 V VGS 0V 50 Ω ID = 1 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 1 A VDS = 10 V, ID = 1 A Min ⎯ ±30 ⎯ 450 2.0 ⎯ 0.28 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.9 1.0 330 4 45 15 Max ±10 ⎯ 100 ⎯ 4.0 2.45 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ ⎯ VOUT ⎯ ⎯ ⎯ ns Turn-on time Switching time Fall time ton ⎯ RL = 200 Ω 25 tf Duty < = 1%, tw = 10 μs VDD ∼ − 200 V ⎯ ⎯ ⎯ VDD ∼ − 360 V, VGS = 10 V, ID = 2 A ⎯ ⎯ 20 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-off time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd 80 9 5 4 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 2 A, VGS = 0 V IDR = 2 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1000 5.0 Max 2 5 −1.5 ⎯ ⎯ Unit A A V ns μC Marking K3757 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 www.DataSheet4U.com 2SK3757 ID – VDS 2 COMMON SOURCE TC = 25℃ PULSE TEST ID – VDS 5 6.0 10 8.0 7.25 7.0 6.75 COMMON SOURCE TC = 25℃ PULSE TEST 8.0 DRAIN CURRENT ID (A) 5.75 10 DRAIN CURRENT ID (A) 1.6 4 1.2 5.5 3 6.5 0.8 5.25 5.0 2 6.0 5.5 0.4 VGS = 4.5V 1 VGS = 5.0V 0 0 2 4 6 8 DRAIN−SOURCE VOLTAGE VDS (V) 10 0 0 10 20 30 40 DRAIN−SOURCE VOLTAGE VDS (V) 50 ID – VGS 5 DRAIN−SOURCE VOLTAGE VDS (V) COMMON SOURCE VDS = 20V PULSE TEST VDS – VGS 10 COMMON SOURCE TC = 25℃ PULSE TEST DRAIN CURRENT ID (A) 4 8 3 6 ID = 2.0A 2 100 25 4 1.0 1 TC = -55℃ 2 0.5 0 0 2 4 6 8 GATE−SOURCE VOLTAGE VGS (V) 10 0 0 4 8 12 16 GATE−SOURCE VOLTAGE VGS (V) 20 ⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) RDS (ON) – ID 30 10.0 DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) COMMON SOURCE VDS = 20V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST 10 TC = -55℃ 25 100 5 3 1.0 VGS = 10, 15 V 1 0.1 0.1 1 DRAIN CURRENT ID (A) 10 0.5 0.1 0.3 0.5 1 3 5 10 DRAIN CURRENT ID (A) 3 2006-11-06 www.DataSheet4U.com 2SK3757 RDS (ON) – Tc 10 IDR – VDS 10 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) COMMON SOURCE VGS = 10 V PULSE TEST 8 3 COMMON SOURCE Tc = 25°C PULSE TEST 1 6 ID = 2 A 4 1.0 0.3 10 3 0.03 1 0.01 VGS = 0, −1 V 0.5 0.1 2 0 −80 −40 0 40 80 120 160 0 −0.2 −0.4 .


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