N16T1630C2B

www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1630C2B 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1M x 16 bit Overview The N16T1630C2B is an integrated memory device containing a low power 16 Mbit SRAM built using a self-refresh DRAM array organized as 1,024,576 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N16T1630C2B is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard BGA packages compatible with other standard 1Mb x 16 SRAMs. Features Single Wide Power Supply Range 2.7 to 3.6 Volts Very low standby current 100µA at 3.0V (Max) Very low operating current 2.0mA at 3.0V and 1µs (Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion Very fast access time 55ns address access option 35...