DatasheetsPDF.com

BSM35GD120D2 Dataheets PDF



Part Number BSM35GD120D2
Manufacturers Siemens Semiconductor
Logo Siemens Semiconductor
Description IGBT Power Module
Datasheet BSM35GD120D2 DatasheetBSM35GD120D2 Datasheet (PDF)

www.DataSheet4U.com BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SIXPACK 1 Ordering Code C67076-A2506-A17 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Puls.

  BSM35GD120D2   BSM35GD120D2


Document
www.DataSheet4U.com BSM 35 GD 120 D2 IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package SIXPACK 1 Ordering Code C67076-A2506-A17 1200V 50A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 35 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 70 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 280 W + 150 -55 ... + 150 ≤ 0.44 ≤ 0.8 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Feb-10-1997 www.DataSheet4U.com BSM 35 GD 120 D2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.7 3.3 0.6 2.4 6.5 3.2 3.9 V VGE = VCE, IC = 1.2 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 35 A, Tj = 25 °C VGE = 15 V, IC = 35 A, Tj = 125 °C Zero gate voltage collector current ICES 1 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current IGES 150 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 11 2 0.3 0.14 - S nF - VCE = 20 V, IC = 35 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Feb-10-1997 www.DataSheet4U.com BSM 35 GD 120 D2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time Values typ. max. Unit td(on) 60 120 ns VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Rise time tr 60 120 VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Turn-off delay time td(off) 400 600 VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Fall time tf 50 75 VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Free-Wheel Diode Diode forward voltage VF 2.3 1.9 2.8 - V IF = 35 A, VGE = 0 V, Tj = 25 °C IF = 35 A, VGE = 0 V, Tj = 125 °C Reverse recovery time trr 0.25 - µs IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge Qrr µC IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C 2 5 - Semiconductor Group 3 Feb-10-1997 www.DataSheet4U.com BSM 35 GD 120 D2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 300 W 260 Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A Ptot 240 220 200 180 160 140 120 100 80 60 40 20 0 0 IC 10 2 tp = 18.0µs 100 µs 10 1 1 ms 10 0 10 ms DC 10 20 40 60 80 100 120 °C 160 -1 10 0 10 1 10 2 10 3 V TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 55 A Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT K/W IC 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 °C 160 ZthJC 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Feb-10-1997 www.DataSheet4U.com BSM 35 GD 120 D2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 70 A 60 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 70 A 60 17V 15V 13V 11V 9V 7V IC 55 50 45 40 35 30 25 20 15 10 5 0 0 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 70 A 60 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Feb-10-1997 www.DataSheet4U.com BSM 35 GD 120 D2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 35 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C Ciss 10 0 600 V 800 V Coss Crss 10 -1 6 4 2 0 0 10 -2 0 40 80 120 160 nC 220 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 6 Feb-10-1997 www.DataSheet4U.com BSM 35 GD 120 D2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 39 Ω 10.


N-3412-2-xxxAA BSM35GD120D2 BSM35GD120DN2


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)