KM29N040IT

www.DataSheet4U.com KM29N040T, KM29N040IT Document Title 512K x 8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 1.1 Data Sheet 1997. Data Sheet 1998. Data Sheet 1998. Draft Date April 10th 1997 April 10th 1998 July 14th 1998 Remark Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to cha nge the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questio ns, please contact the SAMSUNG branch office near you. 1 www.DataSheet4U.com KM29N040T, KM29N040IT 512K x 8 Bit NAND Flash Memory FEATURES Single 5.0 - volt Power Supply Organization - Memory Cell Array : 512K x 8 - Data Register : 32 x 8 bit Automatic Program and Erase - Frame Program : 32Byte in 500 µs - Block Erase : 4K Byte in 6ms 32-Byte Frame Read Operation - Random Access : 15 µs(Max.) - Serial Frame Access : 120ns(Min.) Command/Address/Data Multiplexed I/O port Low Operation Current (Typical) - 10µA Standby Current - 10mA Read/ Program/Erase Current Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) FLASH MEMORY GENERAL DESCRIPTION The KM29N040 is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typically 500 µs...