H5N3011P

H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline TO-3P D G S 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G0385-0200 Rev.2.00 Aug.05.2004 1. Gate 2. Drain (Flange) 3. Source Ratings 300 ±30 88 176 88 176 30 54 150 0.833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.2.00, Aug.05.2004, page 1 of 6 H5N3011P Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGS...