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P6NK60 Dataheets PDF



Part Number P6NK60
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP6NK60
Datasheet P6NK60 DatasheetP6NK60 Datasheet (PDF)

www.DataSheet4U.com STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK60Z STP6NK60ZFP STB6NK60Z STB6NK60Z-1 s s s s s s VDSS 600 600 600 600 V V V V RDS(on) < 1.2 < 1.2 < 1.2 < 1.2 Ω Ω Ω Ω ID 6 6 6 6 A A A A Pw 110 W 32 W 110 W 110 W 1 TYPICAL RDS(on) = 1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REP.

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www.DataSheet4U.com STP6NK60Z - STP6NK60ZFP STB6NK60Z - STB6NK60Z-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK60Z STP6NK60ZFP STB6NK60Z STB6NK60Z-1 s s s s s s VDSS 600 600 600 600 V V V V RDS(on) < 1.2 < 1.2 < 1.2 < 1.2 Ω Ω Ω Ω ID 6 6 6 6 A A A A Pw 110 W 32 W 110 W 110 W 1 TYPICAL RDS(on) = 1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 3 1 2 TO-220 D PAK 2 TO-220FP 3 12 I2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP6NK60Z STP6NK60ZFP STB6NK60ZT4 STB6NK60Z-1 MARKING P6NK60Z P6NK60ZFP B6NK60Z B6NK60Z PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE April 2003 1/13 www.DataSheet4U.com STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP6NK60Z STB6NK60Z STB6NK60Z-1 Value STP6NK60ZFP Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 6 3.8 24 110 0.88 600 600 ± 30 6 (*) 3.8 (*) 24 (*) 32 0.24 3500 4.5 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns V °C °C ( ) Pulse width limited by safe operating area (1) ISD ≤6A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 / D2PAK / I2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.14 62.5 300 TO-220FP 4.2 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 6 210 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 www.DataSheet4U.com STP6NK60Z - STP6NK60ZFP - STB6NK60Z - STB6NK60Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 100µA VGS = 10V, ID = 3 A 3 3.75 1 Min. 600 1 50 ±10 4.5 1.2 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 8 V, ID = 3 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5 905 115 25 56 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 480V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 3 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 6 A, VGS = 10V Min. Typ. 14 14 33 6 17 46 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 3 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 6 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 47 19 16 16 29 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (p.


HD6433875 P6NK60 STA405A


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