UPD5702
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NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER: POUT = +21 dBm TY...
Description
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NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GHz ON CHIP OUTPUT POWER CONTROL FUNCTION SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
INTERNAL BLOCK DIAGRAM
Pout2 1
8 Pin2
Pout2
2
7 Pin2
GND
3
6 GND
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
Pin1 4
5 Pout1
APPLICATIONS
1.9 GHZ Application Ex. PHS etc. 2.4 GHz application Ex. Bluetooth, Wireless LAN, etc. General purpose medium power AGC amplifier
ELECTRICAL CHARACTERISTICS (TA = 25°C, VDS = 3.0 V, f = 1.9 GHz, unless otherwise specified)
PART NUMBER SYMBOLS IDS VGS POUT PAE Padj1 Padj2 IRL ORL ISOL OBW PARAMETERS AND CONDITIONS Circuit Current, PIN = -5 dBm, POUT = +20.5 dBm Gate Bias Voltage, PIN = -5 dBm, POUT = +20.5 dBm Output Power, PIN = -5 dBm Power Added Efficiency, PIN = -5 dBm, POUT = +20.5 dBm Adjacent Channel Power 1, PIN = -5 dBm, POUT = +20.5 dBm Adjacent Channel Power 2, PIN = -5 dBm, POUT = +20.5 dBm Input Return Loss, PIN = -20 dBm Output Retur...
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