2SJ332

www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 2 3 3 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg 2 1 Ratings –20 ±20 –10 –40 –10 20 150 –55 to +150 Unit V V A A A W °C °C 2 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr –20 ±20 — — –1.0 — — 6 — — — — — — — — — Typ — — — — — 0.05 0.09 9 730 680 260 13 110 90 110 –1.2 50 Max — — ±10 –100 –2.5 0.08 0.14 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V µs IF = –10 A, VGS = 0 IF = –10 A, VGS = 0, diF/dt = 50 A/µs ID = –5 A, VGS = –10 V, RL = 2 Ω Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –16 V,...