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STP2NC70ZFP Dataheets PDF



Part Number STP2NC70ZFP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL MOSFET
Datasheet STP2NC70ZFP DatasheetSTP2NC70ZFP Datasheet (PDF)

www.DataSheet4U.com N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 s s s s s STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 VDSS 700 700 700 700 V V V V RDS(on) < 8.5 < 8.5 < 8.5 < 8.5 Ω Ω Ω Ω ID 1.4 A 1.4 A 1.4 A 1.4 A Pw 50 W 25 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 7.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220 TO-220FP 3 2 1.

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www.DataSheet4U.com N-CHANNEL 700V - 7.3Ω - 1.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH™III MOSFET TYPE STP2NC70Z STP2NC70ZFP STD1NC70Z STD1NC70Z-1 s s s s s STP2NC70Z, STP2NC70ZFP STD1NC70Z, STD1NC70Z-1 VDSS 700 700 700 700 V V V V RDS(on) < 8.5 < 8.5 < 8.5 < 8.5 Ω Ω Ω Ω ID 1.4 A 1.4 A 1.4 A 1.4 A Pw 50 W 25 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 7.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220 TO-220FP 3 2 1 3 1 IPAK DPAK DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE STP2NC70Z STP2NC70ZFP STD1NC70ZT4 STD1NC70Z-1 MARKING P2NC70Z P2NC70ZFP D1NC70Z D1NC70Z PACKAGE TO-220 TO-220FP DPAK IPAK PACKAGING TUBE TUBE TAPE & REEL TUBE February 2002 1/13 www.DataSheet4U.com STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP2NC70Z Value STP2NC70ZFP STD1NC70Z STD1NC70Z-1 Unit VDS VDGR VGS ID ID IDM (l) PTOT IGS VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 1.4 0.9 5.6 50 0.4 700 700 ± 25 1.4 (*) 0.9 (*) 5.6 (*) 25 0.2 ± 50 2000 3 2500 -65 to 150 -65 to 150 1.4 0.9 5.6 45 0.36 V V V A A A W W/°C mA V V/ns V °C °C (l) Pulse width limited by safe operating area (1) I SD ≤10A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max (for SMD) (#) Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 62.5 300 2.5 TO-220FP 5 DPAK IPAK 2.75 100 100 275 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 1.4 60 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO αT Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Test Conditions Igs=± 1mA (Open Drain) T=25°C Note(3) Min. 25 1.3 Typ. Max. Unit V 10-4/°C Note: 3. ∆VBV = αT (25°-T) BVGSO(25°) (#) When mounted on minimum Footprint PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 www.DataSheet4U.com STP2NC70Z, STP2NC70ZFP, STD1NC70Z, STD1NC70Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.7 A 3 4 7.3 Min. 700 1 50 ±10 5 8.5 Typ. Max. Unit V µA µA µA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 0.7 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.2 305 34 3.6 28 Max. Unit S pF pF pF pF VGS = 0V, VDS = 0V to 560V SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 350 V, ID = 0.8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, ID = 1.6 A, VGS = 10V Min. Typ. 11 8 8 2 3.8 12 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 350 V, ID = 0.8 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, ID = 1.6 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 27 30 20.


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