H6968CS

www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) 8-Lead Plastic SO-8 Package Code: S Features RDS(on)=32mΩ@VGS=2.5V, ID=5.5A RDS(on)=24mΩ@VGS=4.5V, ID=6.5A Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Li ion Battery Packs Use Designed for Battery Switch Appliactions ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6.5 30 2 1.3 -55 to +150 62.5 Units V V A A W W °C °C/W Total Power Dissipation @TA=25oC Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 o *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board Pin Assignment & Internal Schematic Diagram Part No. Pin Assignment Internal Schematic Diagram D1 D2 G2 H6968S S2 G2 S1 G1 1 2 3 4 Top View 8 7 6 5 D2 D2 D1 D1 G1 S1 D S2 D G2 H6968CS S2 G2 S1 G1 1 2 3 4 Top View 8 7 6 5 D D D D G1 S1 S2 H6968S, H6968CS HSMC Product Specification www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted)...