A720

Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 s Features q Complementary pair with 2SC1317 and 2SC1318. 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 13.5±0.5 s Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to 2SA719 –30 base voltage 2SA720 VCBO –60 V Collector to 2SA719 –25 VCEO V emitter voltage 2SA720 –50 Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC –500 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base 2SA719 voltage 2SA720 Collector to emitter 2SA719 voltage 2SA720 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –10mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –10V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min typ max Unit – 0.1 µA –...