Document
UNISONIC TECHNOLOGIES CO., LTD
6N60
6.2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N60L-TA3-T
6N60G-TA3-T
TO-220
6N60L-TF3-T
6N60G-TF3-T
TO-220F
6N60L-TF1-T
6N60G-TF1-T
TO-220F1
6N60L-TF2-T
6N60G-TF2-T
TO-220F2
6N60L-TF3T-T
6N60G-TF3T-T
TO-220F3
6N60L-TMS-T
6N60G-TMS-T
TO-251S
6N60L-TQ2-T
6N60G-TQ2-T
TO-263
6N60L-TQ2-R
6N60G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S GD S
Packing
Tube Tube Tube Tube Tube Tube Tube Tape Reel
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1 of 7
QW-R502-117. L
6N60
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-117. L
6N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS ±30 V IAR 6.2 A
Continuous Drain Current Pulsed Drain Current (Note 2)
ID 6.2 A IDM 24.8 A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
EAS EAR
440 mJ 13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 ns
TO-220/TO-263
125 W
Power Dissipation
TO-220F/TO-220F1 TO-220F3
PD
40 W
TO-220F2
42 W
TO-251S
55 W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ 3. L = 25mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
Junction to Ambient
TO-220F1/TO-220F2 TO-220F3/TO-263
TO-251S
TO-220/TO-263
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251S
SYMBOL θJA
θJC
RATING
62.5
110 1.0 3.2 2.97 2.27
UNIT °C/W
°C/W
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3 of 7
QW-R502-117. L
6N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
600
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V VDS=480V, VGS=0V, TJ =125°C
10 μA 10 μA
Gate- Source Leakage Current
Forward Reverse
IGSS
VG=30V, VDS=0V VGS=-30V, VDS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
100 nA -100 nA 0.53 V/°C
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance
VGS(TH) RDS(ON)
VDS=VGS, ID=250μA VGS=10V, ID=3.1A
2.0 4.0 V 1.0 1.5 Ω
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS=25V, VGS=0V, f=1.0 MHz
770 1000 pF 95 120 pF 10 13 pF
SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
tD(ON) tR
tD(OFF) tF QG
QGS QGD
VDD=300V, ID =6.2A, RG =25Ω (Note 1, 2)
VDS=480V, ID=6.2A, VGS=10V (Note 1, 2)
40 50 ns 70 150 ns 40 90 ns 80 100 ns 20 25 nC 4.9 nC 9.4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=6.2 A
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
1.4 V 6.2 A
24.8 A
Reverse Recovery Time
trr VGS=0V, IS=6.2A,
Reverse Recovery Charge
QRR dIF/dt =100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
290 ns 2.35 μC
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QW-R502-117. L
6N60
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ -
+ VDS -
L
Power MOSFET
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
.