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6N60 Dataheets PDF



Part Number 6N60
Manufacturers UTC
Logo UTC
Description 600V N-CHANNEL POWER MOSFET
Datasheet 6N60 Datasheet6N60 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low rever.

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UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N60L-TA3-T 6N60G-TA3-T TO-220 6N60L-TF3-T 6N60G-TF3-T TO-220F 6N60L-TF1-T 6N60G-TF1-T TO-220F1 6N60L-TF2-T 6N60G-TF2-T TO-220F2 6N60L-TF3T-T 6N60G-TF3T-T TO-220F3 6N60L-TMS-T 6N60G-TMS-T TO-251S 6N60L-TQ2-T 6N60G-TQ2-T TO-263 6N60L-TQ2-R 6N60G-TQ2-R TO-263 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-117. L 6N60  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-117. L 6N60 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 6.2 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 6.2 A IDM 24.8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 440 mJ 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 ns TO-220/TO-263 125 W Power Dissipation TO-220F/TO-220F1 TO-220F3 PD 40 W TO-220F2 42 W TO-251S 55 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 25mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220/TO-220F Junction to Ambient TO-220F1/TO-220F2 TO-220F3/TO-263 TO-251S TO-220/TO-263 TO-220F/TO-220F1 Junction to Case TO-220F3 TO-220F2 TO-251S SYMBOL θJA θJC RATING 62.5 110 1.0 3.2 2.97 2.27 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-117. L 6N60 Power MOSFET  ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 600 V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V VDS=480V, VGS=0V, TJ =125°C 10 μA 10 μA Gate- Source Leakage Current Forward Reverse IGSS VG=30V, VDS=0V VGS=-30V, VDS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 100 nA -100 nA 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS=VGS, ID=250μA VGS=10V, ID=3.1A 2.0 4.0 V 1.0 1.5 Ω DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS=25V, VGS=0V, f=1.0 MHz 770 1000 pF 95 120 pF 10 13 pF SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tR tD(OFF) tF QG QGS QGD VDD=300V, ID =6.2A, RG =25Ω (Note 1, 2) VDS=480V, ID=6.2A, VGS=10V (Note 1, 2) 40 50 ns 70 150 ns 40 90 ns 80 100 ns 20 25 nC 4.9 nC 9.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS=0V, IS=6.2 A Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM 1.4 V 6.2 A 24.8 A Reverse Recovery Time trr VGS=0V, IS=6.2A, Reverse Recovery Charge QRR dIF/dt =100 A/μs (Note 1) Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. 290 ns 2.35 μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R502-117. L 6N60  TEST CIRCUITS AND WAVEFORMS D.U.T. + - + VDS - L Power MOSFET RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms .


IXGC16N60B2D1 6N60 D359M3D


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