K6R4008V1C

www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 3Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics. 1.3 Changed ISB1 to 20mA Relax D.C parameters. Item ICC 12ns 15ns 20ns Previous 160mA 155mA 150mA Current 195mA 190mA 185mA Final Draft Data Feb. 12. 1999 Mar. 29. 1999 Remark Preliminary Preliminary Rev. 2.0 Aug. 19. 1999 Preliminary Rev. 3.0 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. ICC 195mA 190mA 185mA Previous Isb 70mA Isb1 20mA ICC 155mA 145mA 135mA 125mA Current Isb 60mA Isb1 10mA Mar. 27. 2000 10ns 12ns 15ns 20ns Rev. 4.0 Rev. 5.0 Add Low Power-Ver. Delete 20ns speed bin Apr. 24. 2000 Sep. 24. 2001 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 5.0 September 2001 www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1C-C/C-L, K6R4008V1C-I/C-P 512K x 8 Bit High-Speed CMOS Static RAM FEATURES Fast Access Time 10,12,15ns(Max.) Low P...