MRF286

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications. Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9.5 dB Intermodulation Distortion — –28 dBc Typical Two–Tone Performance at 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 10.5 dB Efficiency — 32% Intermodulation Distortion — –30 dBc S–Parameter Characterization at High Bias Levels Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 60 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters MRF286 MRF286S Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE 2000 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 465–04, STYLE 1 (MRF286) CASE 465A–04, STYLE 1 (MRF286S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 240 1.37 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Charac...