MRF284

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop. Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = –29 dBc Typical Single–Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain = 9.5 dB Efficiency = 45% Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power MRF284 MRF284S 30 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–01, STYLE 1 (MRF284) CASE 360C–03, STYLE 1 (MRF284S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 87.5 0.5 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.0 Unit °C/W ELECTRICAL ...