MT16LD3264A

www.DataSheet4U.com 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs DRAM MODULE FEATURES Eight-CAS# ECC pinout in a 168-pin, dual in-line memory module (DIMM) 64MB (8 Meg x 64), 128MB (16 Meg x 64), and 256MB (32 Meg x 64) Nonbuffered High-performance CMOS silicon-gate process Single +3.3V ±0.3V power supply All inputs, outputs and clocks are LVTTLcompatible 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms Extended Data-Out (EDO) PAGE MODE access cycle Serial presence-detect (SPD) MT8LD864A X, MT16LD1664A X, MT32LD3264A X For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html PIN ASSIGNMENT (Front View) 168-Pin DIMM (H-14; 64MB) (H-17; 128MB) (H-30; 256MB) OPTIONS Package 168-pin DIMM (gold) Timing 50ns access 60ns access Access Cycle EDO PAGE MODE MARKING G -5 -6 X KEY TIMING PARAMETERS SPEED -5 -6 tRC tRAC tPC tAA tCAC tCAS 84ns 104ns 50ns 60ns 20ns 25ns 25ns 30ns 13ns 15ns 8ns 10ns PART NUMBERS PART NUMBER MT8LD864AG-5 X MT8LD864AG-6 X MT16LD1664AG-5 X MT16LD1664AG-6 X MT32LD3264AG-5 X* MT32LD3264AG-6 X* CONFIGURATION 8 Meg x 64 8 Meg x 64 16 Meg x 64 16 Meg x 64 32 Meg x 64 32 Meg x 64 SPEED 50ns 60ns 50ns 60ns 50ns 60ns *Contact factory for availability NOTE: Pin symbols in parentheses are not used on these modules but may be used for other modules in this product family. They are for reference only. PIN SYMBOL PIN 1 VSS 43 2 DQ0 44 3 DQ1 45 4 DQ2 46 5 DQ3 47 6 VDD...