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TS13001
High Voltage NPN Transistor
BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib...
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TS13001
High Voltage
NPN Transistor
BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA
Pin assignment: 1. Emitter 2. Collector 3. Base
Features
High voltage.
Ordering Information
Part No. TS13001CT Packing Bulk Package TO-92
High speed switching Structure
Silicon triple diffused type.
NPN silicon
transistor Absolute Maximum Rating (Ta = 25 oC
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC
unless otherwise noted)
Symbol
VCBO VCEO VEBO IC
Limit
500V 400V 9 0.1 0.3
Unit
V V V A
Pulse Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 5mS, Duty <= 10% TO-92 PD TJ TSTG
0.6 +150 - 55 to +150
W
o o
C C
Electrical Characteristics
Ta = 25 oC unless otherwise noted
Parameter Static
Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Output Capacitance Storage Time Fall Time
Conditions
IC = 10mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50mA / 10mA VCE = 5V, IC = 20mA VCB = 10V, f = 0.1MHz VCE = 250V, IC = 5 Ib, Ib1=Ib2=40mA
Symbol
Min
500 400 9 ---10 ----
Typ
-------4 ---
Max
---100 0.01 0.5 40 -2.0 0.8
Unit
V V V uA uA V
BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE Cob ts tf
pF uS
Note : pul...