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BIPOLARICS, INC
Part Number BMT1720B20
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEA...
www.DataSheet4U.com
BIPOLARICS, INC
Part Number BMT1720B20
SILICON MICROWAVE POWER
TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
Common Base, Class C Package Configuration High Output Power
20 W @ 1.7 to 2.0 GHz High Gain Bandwidth Product f = 6.0 GHz @ IC = 3200 mA t High Gain GPE = 7.0 dB to 8.2 dB High Reliability Gold Metallization Nitride Passivation Diffused Ballast Resistors BeO Package Built-In Matching Network
Absolute Maximum Ratings:
SYMBOL PARAMETERS RATING UNITS
VCBO VCEO VEBO IC T
J
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance
50 28 3.5 3200 200 -65 to 200 6.5
V V V mA
o o
for Broadband Operation
PERFORMANCE DATA: Electrical Characteristics (TA = 25oC)
SYMBOL PARAMETERS & CONDITIONS
VCE =28V, I C = 3200 mA, Class C
C
TSTG
C
θJC
C/W
UNIT
MIN.
TYP.
MAX.
P1dB
Power output at 1 dB compression:
f = 1.7 GHz
W
20
η
hFE
Collector Efficiency
Class C
%
50
Forward Current Transfer Ratio: VCB = 5V, IC = 100 mA
10
60
100
COB
Output Capacitance:
f = 1 MHz, I E = 0
pF
4.5
PT
Total Power Dissipation
W
40
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PAGE 2
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWER
TRANSISTOR
www.DataSheet4U.com
PAGE 3
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWER
TRANSISTOR
www.DataSheet4U.com
PAGE 4
BIPOLARICS, INC.
Part Number BMT1720B20
SILICON MICROWAVE POWE...