N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/08/04 REVISED DATE :
GP9973
N-CHANNEL ENHANCEMENT MODE P...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/04 REVISED DATE :
GP9973
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 80m 3.9A
The GP9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Simple Drive Requirement *Low Gate Charge
Description
Features
Package Dimensions
D
GAUGE PLANE
E
REF. A A1 A2 b b1 b2 b3 c
A
Millimeter Min. Max.
0.381 2.921 0.356 0.356 1.143 0.762 0.203 0.5334 4.953 0.559 0.508 1.778 1.143 0.356
REF. c1 D E E1 e HE L
Millimeter Min. Max.
0.203 0.279 9.017 10.16 6.096 7.112 7.620 8.255 2.540 BSC 10.92 2.921 3.810
SEATING PLANE Z Z
b
L
SECTION Z - Z
b
e
DIP-8
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current
1,2 3 3
c
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 60 20 3.9 2.5 20 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-amb
Value 62.5
Unit /W
GP9973
Page: 1/4
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ISSUED DATE :2005/08/04 REVISED DATE :
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 60 1.0 Typ. 0.06 3.5 8 2 4 8 4 20 6 700 8...
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