TIG030TS

www.DataSheet4U.com Ordering number : ENA0637A TIG030TS SANYO Semiconductors DATA SHEET TIG030TS Features N-Channel IGBT Light-Controlling Flash Applications Low-saturation voltage. 4V drive. Enhansment type. Built-in gate-to-emitter protection diode. Mounting height 1.1mm, mounting area 19.2mm2. dv / dt guarantee.* Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP dVCE / dt Tch Tstg PW≤1ms PW≤500µs, duty cycle≤0.5%, CM=400µF VCE≤320V, starting Tch=25°C Conditions Ratings 400 ±6 ±8 150 400 150 --40 to +150 Unit V V V A V / µs °C °C Electrical Characteristics at Ta=25°C Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=±6V, VCE=0V Ratings min 400 10 ±10 typ max Unit V µA µA Marking : G030 Continued on next page. * : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment e...