RIC7113E4

www.DataSheet4U.com PD-93920A RIC7113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features n Total dose capability to 100K Rad (Si) n Floating channel designed for bootstrap operation n Fully operational to +400V n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs Product Summary VOFFSET IO+/VOUT ton/off (typ.) Delay Matching(typ.) 400V max. 2A / 2A 10 - 20V 120 & 100 ns 5 ns Description The RIC7113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers n Hermetically Sealed feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are n Lightweight matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts. Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All volt...