www.DataSheet4U.com
Rev 2: Nov 2004
AO3402, AO3402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transist...
www.DataSheet4U.com
Rev 2: Nov 2004
AO3402, AO3402L ( Green Product ) N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 4 A RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 110mΩ (VGS = 2.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25°C TA=70°C ID IDM PD TJ, TSTG
Maximum 30 ±12 4 3.4 15 1.4 1 -55 to 150
Units V V A
W °C
Symbol
A A
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO3402, AO3402L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=24V,...