K117

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −50 10 300 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of JEDEC TO-92 high temperature/current/voltage and the significant change in JEITA SC-43 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-5F1D operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.21 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Symbol IGSS V (BR) GDS I...