E180NE10

www.DataSheet4U.com ® STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET™ POWER MOSFET TYPE STE180NE10 s s s s s V DSS 100 V R DS(on) < 6 mΩ ID 180 A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( ) P tot V ISO T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (AC-RMS) Storage T emperature Max. Operating Junction Temperature o o o Value 100 100 ± 20 180 119 540 360 2.88 2500 -55 to 150 150 ( 1) ISD ≤180 Α, di/dτ ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V o o C C 1/8 () Pulse width limited by safe operating area November 1999 www.DataSheet4U.com STE180NE10 THERMAL DATA R thj -case R thc-h Therm...