N-CHANNEL MOSFET
STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1
N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerME...
Description
STP7NC70Z - STP7NC70ZFP STB7NC70Z - STB7NC70Z-1
N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP7NC70Z/FP STB7NC70Z/-1
s s
VDSS 700V 700V
RDS(on) < 1.38Ω < 1.38Ω
ID 6A 6A
1 3
s s s
TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D 2PAK
1
3 2
TO-220
TO-220FP
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -6
I PAK (Tabless TO-220)
2
12
3
Value STP(B)7NC70Z(-1) 700 700 ± 25 6(*) 3.7(*) 24 4...
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