W10NK80Z

STP10NK80Z, STP10NK80ZFP, STW10NK80Z N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet — production data Features TAB Type STP10NK80Z STP10NK80ZFP STW10NK80Z VDSS 800V 800V 800V RDS(on) ID <0.90Ω 9A <0.90Ω 9A <0.90Ω 9A Pw 160 W 40 W 160 W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeability 3 2 1 TO-220 3 2 1 TO-220FP TO-247 Applications ■ Switching application Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Figure 1. Internal schematic diagram D(2,TAB) G(1) S(3) AM01476v1 Table 1. Device summary Part number STP10NK80Z STP10NK80ZFP STW10NK80Z Marking P10NK80Z P10NK80ZFP W10NK80Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube March 2012 This is information on a product in full production. Doc ID 8911 Rev 7 1/17 www.st.com 17 Contents Contents STP10NK80Z, STP10NK80ZFP, STW10NK80Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . ...