2SJ306
www.DataSheet4U.com Ordering number:EN4316
P-Channel Silicon MOSFET
2SJ306
Ultrahigh-Speed Switching Applications
Feat...
Description
www.DataSheet4U.com Ordering number:EN4316
P-Channel Silicon MOSFET
2SJ306
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2063A
[2SJ306]
10.0 3.2 4.5 2.8
3.5 7.2 16.0
18.1
5.6
14.0
1.6 1.2 0.75 1 2 3 2.55
2.4 0.7
2.55
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25˚C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Conditions
2.4
Ratings –250 ±30 –3 –12 2.0 25 150 –55 to +150
Unit V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–250V, VGS=0 VGS=±25V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–1.5A ID=–1.5A, VGS=–10V –1.5 1.5 2.5 1.5 2.0 Conditions Ratings min –250 ±30 –100 ±10 –2.5 typ max Unit V V µA µA V S Ω
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require...
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