28F128P33

www.DataSheet4U.com Intel StrataFlash® Embedded Memory (P33) Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode — Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ) — 3.0 V buffered programming at 7 µs/byte (Typ) „ Architecture: — Multi-Level Cell Technology: Highest Density at Lowest Cost — Asymmetrically-blocked architecture — Four 32-KByte parameter blocks: top or bottom configuration — 128-KByte main blocks „ Voltage and Power: — VCC (core) voltage: 2.3 V – 3.6 V — VCCQ (I/O) voltage: 2.3 V – 3.6 V — Standby current: 70 µA (Typ) for 256-Mbit — 4-Word synchronous read current: 16 mA (Typ) at 52MHz „ Quality and Reliability — Operating temperature: –40 °C to +85 °C — Minimum 100,000 erase cycles per block — ETOX™ VIII process technology (130 nm) „ Security: — One-Time Programmable Registers: — 64 unique factory device identifier bits — 64 user-programmable OTP bits — Additional 2048 user-programmable OTP bits — Selectable OTP space in Main Array: — Four pre-defined 128-KByte blocks (top or bottom configuration. — Entire Array OTP (Top or Bottom Config.) — Absolute write protection: VPP = VSS — Power-transition erase/program lockout — Individual zero-latency block locking — Individual block lock-down „ Software: — 20 µs (Typ) program suspend — 20 µs (Typ) erase suspend — Intel® F...