DatasheetsPDF.com

LP1500P100

Filtronic Compound Semiconductors
Part Number LP1500P100
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED 1W POWER PHEMT
Published Mar 22, 2005
Detailed Description PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 ...
Datasheet PDF File LP1500P100 PDF File

LP1500P100
LP1500P100

Overview
PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency LP1500P100 • DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µ m x 1500 µ m Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP1500 also features Si3N4 passivat...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)