Supertex inc.
LP0701
P-Channel Enhancement-Mode Lateral MOSFET
Features
General Description
► Ultra-low threshold ►...
Supertex inc.
LP0701
P-Channel Enhancement-Mode Lateral MOSFET
Features
General Description
► Ultra-low threshold ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on-resistance ► Freedom from secondary breakdown ► Low input and output leakage
Applications
► Logic level interfaces ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers
These enhancement-mode (normally-off)
transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. The low threshold voltage and low on-resistance characteristics are ideally suited for hand held, battery operated applications.
Ordering Information
Device
Package Options 8-Lead SOIC (Narrow Body)
TO-92
LP0701
LP0701LG-G
-G indicates package is RoHS compliant (‘Green’)
LP0701N3-G
BVDSS/BVDGS
(V)
-16.5
RDS(ON)
(Ω)
1.5
VGS(TH)
(max) (V)
-1.0
ID(ON)
(min) (A)
-1.25
Pin Configurations
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage
BVDSS BVDGS ±10V
Operating and storage temperature -55°C to +150°C
Soldering temperature*
...