DTN1A80

www.DataSheet4U.com DTN1A60/80 Triacs / Sensitive Gate Features Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) High Commutation dv/dt Symbol 3.T2 BVDRM = 600V / 800V IT(RMS) = 1 A 2.Gate ITSM = 9.1 A TO-92 1.T1 General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensitivity is required in all four quadrants. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG Parameter ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 58 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 58 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us Ratings 600 1.0 9.1/10 0.41 1.0 0.1 0.5 6.0 - 40 ~ 125 - 40 ~ 150 0.2 800 Units V A A A2s W W A V °C °C g Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/6 www.DataSheet4U.com DTN1A60/80 Electrical Characteristics Ratings Symbol Items Conditions Min. IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth...