DBT151-600

www.DataSheet4U.com DBT151-600 Standard Gate Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) Low On-State Voltage (1.5V(Typ.)@ ITM) Non-isolated Type 1.Cathode Symbol 2. Anode BVDRM = 600V IT(RMS) = 12 A 3.Gate ITSM = 120A TO-220 General Description Standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =111 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC = 111 °C, pulse width TC = 111 °C,pulse width TC = 111 °C, pulse width TC =111 °C, pulse width 1.0 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 7.6 12 120 72 50 5 0.5 2 5 - 40 ~ 125 - 40 ~ 150 Units V A A A A2 s A/ W W A V °C °C June, 2005. Rev.0 copyright @ D&I Semiconduct...