DFF50N06

www.DataSheet4U.com DFF50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.023Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.023 ohm ID = 28A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 60 28 20 112 Units V A A A V mJ mJ V/ns W W/°C °C °C ±25 643 4.7 7.0 47 0.31 - 55 ~ 175 300 Thermal Characteristics Symbol RθJC RθCS RθJA June, 2006, Rev.0. Copyright@ D&I Semiconductor Co., Ltd., Korea . All rights reserved Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal R...